? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 40v v dgr t j = 25 c to 175 c, r gs = 1m 40 v v gsm transient 20 v i d25 t c = 25 c (chip capability) 600 a i l(rms) external lead current limit 200 a i dm t c = 25 c, pulse width limited by t jm 1800 a i a t c = 25 c 200 a e as t c = 25 c3j p d t c = 25 c 940 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1 minute 2500 v~ i isol 1ma t = 1 second 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 40 v v gs(th) v ds = v gs , i d = 250 a 1.5 3.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 10 a t j = 150 c 1 ma r ds(on) v gs = 10v, i d = 100a, note 1 1.3 m trencht2 tm gigamos tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXTN600N04T2 ds100172b(10/12) v dss = 40v i d25 = 600a r ds(on) 1.3m features z international standard package z minibloc, with aluminium nitride isolation z 175c operating temperature z isolation voltage 2500 v~ z high current handling capability z fast intrinsic diode z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters and off-line ups z primary-side switch z high speed power switching applications either source terminal s can be used as the source terminal or the kelvin source ( gate return ) terminal. minibloc, sot-227 e153432 g d s s g = gate d = drain s = source
ixys reserves the right to change limits, test conditions, and dimensions. IXTN600N04T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. sot-227b (ixtn) outline (m4 screws (4x) supplied) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 90 150 s c iss 40 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 6400 pf c rss 1470 pf r gi gate input resistance 1.32 t d(on) 40 ns t r 20 ns t d(off) 90 ns t f 250 ns q g(on) 590 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 127 nc q gd 163 nc r thjc 0.16 c/w r thcs 0.05 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 600 a i sm repetitive, pulse width limited by t jm 1800 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 100 ns i rm 3.3 a q rm 165 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 200a r g = 1 (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 20v
? 2012 ixys corporation, all rights reserved IXTN600N04T2 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 v ds - volts i d - amperes v gs = 15v 10v 7v 4v 4.5v 5v 6v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v ds - volts i d - amperes v gs = 15v 10v 7v 5 v 6 v 3 v 4v fig. 4. normalized r ds(on) vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d < 600a fig. 5. normalized r ds(on) vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175oc t j = 25oc fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.00.51.01.52.02.53.0 v ds - volts i d - amperes v gs = 15v 5v 4v 4.5v 10v 7v 6v fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 200 220 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTN600N04T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 q g - nanocoulombs v gs - volts v ds = 20v i d = 300a i g = 10ma fig. 11. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - nanofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10,000 0.1 1 10 100 v ds - volts i d - amperes 25s 100s 1ms 10ms r ds(on) limit t j = 175oc t c = 25oc single pulse 100ms external lead limit dc
? 2012 ixys corporation, all rights reserved IXTN600N04T2 fig. 14. resistive turn-on rise time vs. drain current 0 10 20 30 40 50 60 70 80 90 100 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 20v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 80 90 100 110 120 130 140 150 160 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 17. resistive turn-off switching times vs. drain current 0 50 100 150 200 250 300 350 400 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 40 60 80 100 120 140 160 180 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 20v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 10 20 30 40 50 60 70 80 90 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 20v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 12345678910 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 20v i d = 200a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXTN600N04T2 ixys ref: t_600n04t2 (v9)11-05-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance .sadgsfgsf 0.300
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